Abstract
We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The I-V characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.
Highlights
Design, Fabrication, and SignalIn the time since the atomic force microscope (AFM) was invented in 1986 [1], scanning probe microscopes (SPMs) have been used to study surface topographies from the micrometer to the atomic scale
We quantitatively evaluated the performance improvements using the I-V characteristics of the inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) and the images obtained with the new probe
The impedance between the metallic tip and the reference electrode of the sample depends on both the material and its structure, and the induced voltage varies by the material and its structure because the impedance is connected in series with the gate oxide
Summary
In the time since the atomic force microscope (AFM) was invented in 1986 [1], scanning probe microscopes (SPMs) have been used to study surface topographies from the micrometer to the atomic scale. Various SPM techniques are used for electrical measurements, including electrostatic force microscopy (EFM) [2,7,8], Kelvin probe force microscopy (KPFM) [3,9,10], scanning capacitance microscopy (SCM) [4,11,12], and scanning spreading resistance microscopy (SSRM) [13,14,15]. We developed a new probe based on a metal-oxide-semiconductor field-effecttransistor (MOSFET) for evaluation of various electrical properties. We term this the tip-on-gate of field-effect-transistor (ToGoFET) probe. The new ToGoFET probe exhibits an improved signal-to-noise ratio and a reduced input voltage requirement, expanding the field of application
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