Abstract
Stacked structures were produced by atomic layer deposition (ALD) using an alternating supply of bis(ethylcyclopentadienyl)ruthenium and gas at a deposition temperature of . The type of the deposited film, either Ru or , was controlled by the total pressure in the ALD system as well as the ratio of the adsorbed to the partial pressure of in the following gas pulse. The resistivity of the deposited Ru and thin films was about 15 and , respectively. The surface morphology of Ru films annealed in ambient was seriously degraded by surface oxidation. Moreover, films were also agglomerated due to the residual stress releasing during the annealing process. However, a stacked structure produced using ALD maintained a smooth surface even at an annealing temperature of in ambient . Auger electron spectroscopy confirmed that the stacked structure successfully blocked oxygen and silicon diffusion. Therefore, the stacked structure produced by ALD is suitable for use as the bottom electrode material for high dielectric applications.
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