Abstract
The electrical performance of the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is greatly affected by the microstructure of the poly-Si. The crystal filtering method is employed to improve the electrical properties of poly-Si TFTs using metal-induced lateral crystallization by the ordering of Si grains. Experimental results indicated that the field-effect mobility of TFTs having crystal filtered poly-Si is more than 2.5 times higher than that of conventional poly-Si TFTs. It is found that the ordered microstructure is one of the key parameters to improve the electrical performance in poly-Si TFTs.
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