Improvement of stress-induced magnetization reversal process of DyFeCo thin films

Abstract

DyFeCo films sputter deposited at relatively low Ar gas pressure condition exhibited the change of easy axis of magnetization by applying relatively low mechanical stress. In order to attain magnetization reversal at lower magnetic field and low applied mechanical stress, a critical mechanical stress, which means the minimum mechanical stress to cause the change of magnetic anisotropy from perpendicular to in plane, should be as low as possible. The saturation field of the magnetization characteristics of the film at the critical field should be as low as possible.