Abstract
GaAs is a promising material to realize high-power wavelength conversion in mid-IR region because of its wide transparency up to 17 µm, more than 6 times higher nonlinear-optical coefficient than that of LiNbO 3 , and high thermal conductivity of 46 W/mK. However, GaAs is optically isotropic so that realization of quasi-phase matching (QPM) is necessary for highly efficient wavelength conversion. Although the sublattice reversal epitaxy [1] or orientation patterned GaAs [2] are successful as the fabrication techniques for QPM GaAs, they are difficult to realize large-aperture devices for high-power wavelength conversion. On the other hand, diffusion bonding was used for large aperture QPM GaAs [3] . However, due to its high temperature process, dissociation of arsenic and free carrier absorption occurred, causing the reduction of the transmittance.
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