Abstract
The interface electronic properties of GaF 3/GaAs structures are investigated for three different deposition procedures, the GaF 3 films have been deposited on n-type GaAs epitaxial layers without breaking the vacuum, or after being exposed to air, or after being treated in (NH 4) 2S 1 solution. It has been found from low-temperature C-V measurements in MIS diodes that a real modulation of the Fermi level in the forbidden band gap of GaAs occurs only when the GaAs epitaxial layer is treated in the sulfur solution and annealed at an optimum temperature prior to deposition of GaF 3. The unpinning mechanism is also discussed in conjunction with the simplified model for sulfur-treated GaAs surfaces.
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