Abstract
Cu2O thin films were deposited on indium–tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid and KOH by the galvanostatic electrochemical deposition at 40 °C with several different current densities. The photo-absorption of Cu2O was increased and the conduction type was changed from weak p-type to clear p-type by raising the current value. Cu2O(2)/Cu2O(1)/ZnO three-layer heterojunctions were fabricated electrochemically by modulation of deposition current density of Cu2O. The first Cu2O layer Cu2O(1) was deposited at a lower deposition current, and the second one Cu2O(2) at a higher current. Under the optimized condition, the conversion efficiency of a Cu2O(2)/Cu2O(1)/ZnO solar cell was found to be higher than that of a Cu2O(1)/ZnO solar cell.
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