Abstract
GaN-based light-emitting devices (LEDs) with and without a rear distributed Bragg reflector (DBR) were grown by metal–organic chemical vapor deposition. The integrated electroluminescence (EL) intensity of LED with a rear nitride DBR showed a super-linear increase up to a current density of 135 A/cm 2 and the relative external quantum efficiency (EQE) kept monotonously increasing with increase in injection current density. For the LED without a rear DBR, however, the emission efficiency reached the maximum at a very low current density of 10 A/cm 2. The improvement is mainly attributed to reflection of light from the DBR to the “top side” and decrease in light absorption in the active region with increase in injection current density. Moreover, the improvement in relative EQE was attributed to the resonant cavity enhancing spontaneous emission at its resonant wavelength too.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
