Abstract
The influence of hafnium (Hf) doping on negative-bias temperature instability in zinc-tin oxide thin-film transistors was studied. Hafnium-zinc-tin oxide TFTs exhibited a turn-on voltage (V ON) that shifted from 0 V to −1 V with negligible changes in the subthreshold swing and field-effect mobility after 3 h of total stresses. The enhanced improvement of the V ON shift (ΔV ON) was attributed to the reduction in the interface trap density, which may result from the suppression of oxygen-vacancy-related defects by the Hf ions.
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