Abstract
This letter examines the effect of oxygen (O2) high-pressure annealing (HPA) on indium zinc oxide (IZO) thin-film transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (Vth), and high ION/OFF ratio of 30.4 cm2/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O2 HPA-treated IZO TFT has superior reliability (ΔVth= -0.5 V) to that of the 0.2-atm-annealed device (ΔVth=-3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O2 HPA treatment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
