Abstract
AbstractUp to 24‐stacked‐layer In0.4Ga0.6As/GaAs quantum dot laser diodes were fabricated using ultrahigh‐rate molecular beam epitaxy. The operation of these devices was investigated between 298 and 353 K. The characteristic temperatures for the threshold currents improved from 72 K to 80 K with an increase in the stacking number from 12 to 19. The gain curves were also evaluated at 298 K for laser diodes with various cavity lengths. The obtained saturated modal gain increased with increasing stacking number. The laser diode with a stacking number of 24 exhibited the highest saturated modal gain at 155 cm‐1. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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