Abstract
The first fabrication of low cost Schottky barrier solar cells on chemically deposited polycrystalline n-Sb2S3 thin films is reported. It is observed that in the films deposited with silico-tungstic acid and annealed, the Schottky barrier height (Φb) of the Au/n-Sb2S3 junctions is considerably improved from 0.54 to 0.76 eV. The ideality factor n decreased from 2.32 to 1.08 and the reverse-saturation current density J0 from 3.2 × 10−6 to 1.5 × 10−9 A cm−2. Under AM 1 illumination, the improved diode exhibited a conversion effiency of ∼3%
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