Abstract
SiO2-SnO2:Er3+ thin films co-doped with Yb3+ ions have been prepared by the sol-gel method. By controlling the Yb3+ concentration, the enhanced Er3+-related near infrared (NIR) emission is achieved under 325 nm excitation. The energy transfer efficiency (ETE) from SnO2 to rare earth is investigated by photoluminescence decay curves. It is found that with the increase of Yb3+ ion concentration to 15 mol%, the ETE gradually increases to ∼68.7%. The comprehensive spectroscopic analysis results demonstrate that both improved ETE and a new energy transfer channel from SnO2 nanocrystals to Er3+ ions via the Yb3+ intermediate state contribute to the Er3+-related NIR emission enhancement.
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