Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor

Abstract

We have characterized and modeled the radio frequency (RF) power performance of a 0.18 µm asymmetric-lightly-doped-drain metal–oxide–semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 µm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.