Abstract
Abstract This work investigates the radiation tolerance of c-Si solar cells under electron energy of 9 MeV with fluence of 5.09×1016 cm−2. The solar cells were fabricated and characterized before and after electron irradiation through current-voltage (I-V), capacitance-voltage (C-V), and frequency dependent conductance (Gp) measurements. The results revealed that all the output parameters such as short circuit current (Isc), open circuit voltage (Voc), series resistance (Rs), and efficiency (η) were degraded after electron irradiation. Capacitance-Voltage measurements show that there is a slight decrease in the base carrier concentration (ND), while a small increase in depletion layer width (WD) was due to an increase in the base carrier concentration. Enhancements in the density of interface states (Nss), and trap time constant (τ) have been observed after electron irradiation. The results has revealed that back surface field (BSF) solar cell with front surface passivation (FSP) presented lowest efficiency degradation ratio of 11.3% as compared to 15.3% of the solar cell without FSP. The subsequent annealing of irradiated Si solar cell devices revealed that the Si solar cell with FSP demonstrated high efficiency recovery ratio of 94% as compared to non-FSP solar cell.
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