Abstract
In the preceding paper, it was shown that aluminum ion implantation significantly improves the oxidation resistance of Si3N4 ceramics under the influence of sodium. Not only is the oxidation rate reduced by up to an order of magnitude, the phase and morphological characteristics of the oxides grown on aluminum‐implanted samples are improved as well. The role of aluminum in negating the detrimental effect of sodium on the oxidation resistance of Si3N4 ceramics can be interpreted on the basis of network modification of the oxide layers by sodium and aluminum cations. The degree of improvement in the oxidation resistance does not, however, necessarily increase with the aluminum concentration. A simple quantitative analysis is presented which correlates the optimum aluminum implant concentration and the sodium content in the gas phase for the optimization of the oxidation resistance of Si3N4 ceramics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
