Abstract
We propose a new structure for organic thin-film transistors, denoted as “elevated-electrode structure” in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current and mobility of a conventional bottom-structured TFT, this being found to be directly related to the height of the elevated electrode. Moreover, the reproducibility of this data confirms a greater stability than that of either top-contact or bottom-contact devices.
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