Abstract
1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1–1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region.
Highlights
Under Electrical and Thermal StressABSTRACT 1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors
High electron mobility transistors (HEMTs) based on AlGaN/GaN have shown great potential in high-frequency and high-power electronic applications because of the superior electrical properties such as wide bandgap, high electron mobility, high breakdown field and high thermal conductivity [1]–[3]
D-mode and E-mode GaN MOS-HEMTs have been fabricated on the same sample simultaneously
Summary
ABSTRACT 1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. A systematic 1/f noise study has been carried out on the recessedgate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1-1000 Hz) measurement has been performed at room (25 ◦C) and elevated (100 ◦C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 ◦C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region. INDEX TERMS GaN MOS-HEMTs, 1/f noise, trapping effect, phonon scattering, carrier-numberfluctuation, mobility-fluctuation
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