Abstract
In the silicon wafers, interstitial oxygen and vacancies make oxygen precipitation in the cell process. The oxygen precipitates become combination centers for minority carriers, and it is resulted in decrease of minority carrier life-time (MCLT) and cell efficiency. In order to grow ingots with low oxygen concentration, we locally optimized hot-zone in the ingot grower. We have designed new hot-zone for commercial 8.3-in. diameter ingot growth using 24-in. quartz crucible and old grower. The average oxygen reduction is about 3 ppma at the top position of ingot, which is similar to the simulation result of oxygen distribution. Despite the inside temperature of grower rises, the concentration of oxygen was suppressed to 15 ppma or less as in a normal heater. As a result, it is possible to grow a low-oxygen ingot that can suppress the light induced degradation (LID), which can fundamentally help improve the efficiency of a high efficiency passivated emitter and rear cell (PERC).
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