Abstract
Here, we report a new strategy to fabricate high performance thin-film transistors (TFTs) by doping gallium (Ga) both in channel (In2O3) and dielectric (Al2O3) layers. The influence of Ga doping on the microstructure and surface morphology of In2O3 films, as well as the oxygen defects states and electrical properties of Al2O3 films have been systematically investigated. The results show Ga doping frustrates In2O3 crystallization and flattens film surface. As for Al2O3, Ga doping increase the dielectric constant, reflective index and decrease the leakage current density. Furthermore, metal oxide TFTs were developed when using In2O3:Ga as the channel and Al2O3:Ga as the dielectric layers. The devices show improved electrical performance and enhanced positive and negative bias stress stability than undoped devices.
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