Abstract
Undoped ZnO thin films were prepared using the ultrasonic spray pyrolysis deposition technique with zinc acetylacetonate dissolved in N,N-dimethylformamide as the source materials solution. The addition of water mist in a parallel flux to the spray solution stream was also used during deposition of the films. The addition of water mist improved the electrical characteristics of the ZnO films. Fresh ZnO samples were then thermally annealed in a H2 reducing atmosphere. X-ray diffraction patterns show mainly the wurzite crystalline ZnO phase in the films. An electrical resistivity (ρ ) of around 2.7 × 10−2 Ω cm was measured at room temperature for the best undoped ZnO film. ρ is approximately one order of magnitude lower than the resistivities found in undoped ZnO films obtained by means of similar non-vacuum deposition techniques. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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