Improved Electrical Characteristics of Amorphous Oxide TFTs Based on $\hbox{TiO}_{x}$ Channel Layer Grown by Low-Temperature MOCVD

Abstract

We report on the fabrication of n-type thin-film transistors (TFTs) based on TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> channels grown by the metal-organic chemical vapor deposition method with the chamber temperature of 250degC. These TFTs exhibit ideal characteristics with the flat saturation, low subthreshold swing, and narrow hysteresis window, all of which are a clear improvement from our previous work based on TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanoparticles. The TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> film in this letter is identified to be in the amorphous phase from X-ray diffraction analysis, and its carrier density is estimated to be 2.6 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> from the transmission line model and analysis of TFT on-resistance measured at various gate biases and channel lengths.