Abstract
Due to the mismatch between ZnO film and [Formula: see text]-Si lattice, there are a large number of interface states which seriously affect the photoelectric properties of ZnO/[Formula: see text]-Si heterojunction optoelectronic devices. In this research, ZnO thin films were deposited on [Formula: see text]-Si by magnetron sputtering and ZnO/[Formula: see text]-Si heterojunction was prepared. CuSCN film buffer layer was inserted into the interface of ZnO/[Formula: see text]-Si heterojunction to reduce the interface state and improve the electric properties of heterojunction. The results show that the insertion of CuSCN films can effectively improve the interface state of ZnO/[Formula: see text]-Si heterojunction, increase the forward current, reduce the reverse current and improve the heterojunction rectification ratio.
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