Abstract
A mixed RF/DC sputtering multilayer molybdenum (Mo) was realized to benefit different properties of films deposited in each mode. The bottom layer was deposited by RF sputtering to increase total reflectance and adherence, and the top layer was deposited by DC sputtering to modify the morphology of molybdenum films and increase light scattering. The morphologies of co-evaporated Cu2ZnSnSe4 (CZTSe) films had not been reliably observed influenced by the top layer of Mo films. Only noticeable change was the lower reflectance of CZTSe films deposited on rough back contact which can be attributed to the diffuse reflection of back contact. The conversion efficiency of completed device is improved by using the novel Mo back contact, especially for the short-circuit current density (Jsc) about 11.7% enhancement.
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