Abstract
Imprint lithography is a promising cost effect alternative to e-beam and optical lithography for producing photonic crystals and other nano-scale light extraction and beam directing elements for LEDs; however, there are several challenges that must be overcome before imprint lithography can be applied to typical LED substrates. This paper reviews progress made at Molecular Imprints Inc. (MII) in imprinting representative 3″ GaN on Sapphire substrates including methods for dealing with substrate non-flatness, multi-die imprint, and imprinting on warped and bowed substrates. The results of imprinting over typical GaN on Sapphire topography and common defects such as fall-on particles and EPI defects is presented along with results on GaN wafers optimized for imprint lithography. Whole wafer thin template replication techniques are also discussed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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