Abstract
High value resistors are desirable in integrated circuits and they can be made by ion implantation. The linearity of conventional boron implanted resistors is not, however, always satisfactory. Methods for improving the voltage linearity of ion-implanted, integrated circuit resistors are described in this paper. In particular the use of a damaging implant was investigated in detail. Hall effect measurements as a function of temperature have shown that a deep acceptor was produced by the damage. The improved linearity observed in such layers was mainly due to the presence of this deep level, rather than to reduction of mobility. A simple theory was developed that reproduced resistor behaviour satisfactorily. It was confirmed that the use of a known deep acceptor, such as indium, also led to improved linearity.
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