Abstract
This study investigated the similarities and differences between B1 monomer and Bn cluster ion implantation into silicon. Small polyatomic boron ions (Bn-, n=1–4) with the same atomic boron kinetic energy (20keV/atom) and atomic fluence (5×1013atoms/cm2) were used. In the simulation, the widely-used SRIM computer code was employed to calculate the as-implanted boron and damage depth profiles of B1 monomer ion implantation in order to make comparisons with experimental results. In the experimental one, the B1 monomer and Bn cluster ions extracted from a tandem accelerator were used to perform ion implantation. Post-annealing methods included one-step (RTA) and two-step (FA+RTA) treatments, where RTA denoted high-temperature rapid thermal annealing at 1050°C for 10s and FA represented low-temperature furnace annealing at 550°C for 1h. The results revealed that all four as-implanted range parameters (average range, longitudinal range straggling, skewness, kurtosis) increase and tend to saturate as the cluster size increases when compared to those of SRIM-calculated results for the B1 implant. Furthermore, the peculiar damage structures produced by different Bn cluster ions lead to various behaviors in both diffusing and activating boron atoms.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.