Abstract
Anti-guided vertical-cavity surface-emitting laser (VCSEL) arrays can be designed to consistently operate in-phase, i.e., with a narrow, on-axis peak in the far field. However, the fabrication of such arrays typically requires anisotropic etching and epitaxial regrowth steps. We have found that anti-guiding behavior can be realized in implant-defined VCSEL arrays. The primary advantage is that the laser arrays can be designed to operate in-phase without requiring any fabrication steps more complicated than those used for conventional implant VCSELs. We present our array structure, a theoretical treatment of the anti-guiding confinement, and experimental results showing the behavior characteristic of anti-guided arrays.
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