Abstract
Effect of m-plane GaN substrate miscut was investigated for InGaN/GaN multi quantum wells (MQWs) light emitting diodes (LEDs). The n-GaN and InGaN/GaN LEDs were grown by metal organic chemical vapor deposition on m-plane (1100)GaN substrates with miscut angles toward the [0001] direction of 0.01 (nominally on-axis m-plane), 0.45, 0.75, 5.4, and 9.6°. The surface morphology improved with increasing the miscut angles toward the [0001] direction. The peak emission wavelength of the electroluminescence grown on the on-axis m-plane and the miscut angle of 0.45° was 391–396 nm, while the miscut angle of 5.4 and 9.6° showed 440–454 nm. These results demonstrate that the surface morphology of GaN and In incorporation in the MQWs are strongly impacted by the miscut angle of GaN substrate.
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