Abstract
A common feature of chalcogenide crystals is the presence of the chalcogen-chalcogen bonds, which result in very stable anion sub-structures (blocks) containing up to eight chalcogenide ions with the electric charge − 2 in units of the proton charge like systems [PS4]3-, [SiS4]4-, [GeS4]4-, [GeSe5]4-, [Ge2Se6]6-. The size of anion blocks, their mutual arrangement and chemical bonds between them consequently determine the optical and detection properties. By modifying the chemical composition with subsequent use of the laser irradiation, it is possible to change crystal optoelectronic properties in a wide spectral range. In the work, we discuss the influence of the structural properties on the stability, electronic, optical and nonlinear-optical efficiency for the group of quaternary chalcogenide crystals with Ag(Pb)–Ga(In)–Si(Ge)–S(Se) composition, that have already found practical applications in IR optoelectronics and non-linear optics. The presented analysis of chemical composition-structure - nonlinear optical properties relationship can be useful for the creation of effective quaternary crystals for nonlinear optics application.
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