Abstract
Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by changing the Al fraction x in the Al_xGa_{1-x}As barrier. Via varying the short range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range versus long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r_s~ 20.
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