Abstract
In the present work, we have fabricated the bottom-gate top-contact configuration of the pentacene organic thin film transistors (OTFTs) using two different dielectric layers. The effect of scaling of poly(methyl methacrylate) (PMMA) and cross-linkable poly(4-vinyl phenol) (PVP) polymer dielectric thickness on the subthreshold slope (SS) in top-contact pentacene OTFTs was investigated. Subthreshold slope improved significantly with the scaling of the thickness of both dielectrics.
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