Abstract
Near-infrared InxGa1-xAs photocathode with better optoelectronic properties is a good candidate for low-light-level (LLL) night-vision system. However, the residual gases in the ultra-high vacuum (UHV) system inevitably affects the stability and photo-emission performance of LLL photoelectric devices such as their quantum efficiency and life-time. In this study, the first-principles calculations were used to investigate the adsorption effect of five different residual gas species, including H2, CH4, CO, H2O and CO2 on Cs-sensitized In0.53Ga0.47As (001) β2 (2 × 4) surface. The study results indicate that CO2 gas molecule is the most easily attached to the Cs-sensitized surface. The adsorption of residual gases leads to the formation of a new dipole pointing from inner Cs atoms to gas molecules. It makes the charge center of the adsorbates escape from the surface, which weakens the interaction between the inner Cs atoms and the clean surface. This results in the increase of the surface work function and degradation of the performance of photoelectric devices. Also, the adsorption of residual gas molecules influences the absorption and reflection coefficients of Cs-sensitized In0.53Ga0.47As (001) β2 (2 × 4) surface.
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