Abstract
We conducted a rapid water-quenching procedure with ultrahigh-temperature oxidation to avoid degradation of the high-quality SiO2/SiC interface formed by ultrahigh-temperature oxidation during the cooling process. A reduction in the interface state density was observed for the SiO2/4H-SiC(0001) interface formed by ultrahigh-temperature oxidation in dry O2 ambient using the water-quenching process, compared with other natural cooling processes. The oxidation temperature dependence of interface state density for the thermally grown SiO2/SiC structures formed using the water-quenching process revealed that degradation of the interface properties occurred not only during the cooling process but also during the continuous oxidation process at exceedingly high temperatures, above 1500 °C, in 100% dry O2 ambient at 1 atm.
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