Abstract
AbstractBy controlling the LT‐AlN nucleation layer, we have demonstrated growth of Ga‐ and N‐polar GaN thin films with identical growth rates on c‐plane sapphire via MOVPE. The Ga‐polar films were highly resistive, while N‐polar films exhibited n‐type conductivity. Under certain nucleation layer processing conditions, the GaN films were mixed‐polar. Using specular X‐ray reflectivity to calculate the density depth profile of the nucleation layers, we identified one mechanism during the processing evolution of the nucleation layer that could give rise to inversion domains within the film, giving raise to mixed‐polar GaN films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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