Abstract
Eight-level/cell stable resistance switching (RS) was observed in an indium-gallium-zinc-oxide (IGZO)-resistive random (ReRAM) cell fabricated on ITO-coated glass substrate by providing nonuniform ozone (O₃) anneal treatment to its sputtered IGZO films. From electrical measurements, it was observed that the time of O₃ anneal significantly impacts the low field diffusion coefficient of O²⁻, which was reduced by more than 40 times when anneal time was increased from 10 to 30 min. Thus, by sequential stacking of nonuniform O₃-annealed IGZO films, it was possible to create a diffusion-resistant medium to O²⁻ which impacted the rate of current rise due to filamentary conduction. Furthermore, through experiments and numerical modeling, we determined vacancy distribution within the filament in a cell that received nonuniform anneal, which was later correlated with electrical conduction. The anneal scheme had been found feasible to realizing a greater number of non-identical stable resistance states up to a maximum eight-level/cell that were defined by a variable current compliance (CC)-based programming. Endurance and retention characteristics of the said resistance levels demonstrated adequate reproducibility and non-volatility.
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