Abstract
Laser scribing of light emitting diode (LED) components on sapphire substrates is shown in this paper to be a viable method of device separation. Three key measurements revealing the effects of UV laser scribing on the LED component performance are discussed and compared for laser scribing at 255 and 355 nm. The differences in these two UV wavelengths are further discussed in terms of quality; comparing pulse energies and pulse repetition frequencies for UV ablation of sapphire. In general, these results prove laser processing can be used as an effective high volume manufacturing procedure for substrate separation.
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