Abstract
Using full three-dimensional (3D) technology computer-aided design (TCAD) simulations, we present a comprehensive statistical study on the random discrete dopant (RDD) induced variability in state-of-the-art intrinsic channel trigate MOSFETs. This paper is focused on the RDD variability sources that are introduced by dopant diffusion from highly doped source/drain (S/D) regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). By considering a realistic lateral doping profile in the channel and evaluating the impact of JNA on the variability of performance parameters such as threshold voltage (Vth), subthreshold slope (SS), drain-induced barrier lowering (DIBL), on current (Ion), and off current (Ioff), we show that the effect of JNA can lead to substantial device variations. The nonnegligible influence of JNA puts limitations on device scaling, which is also investigated in this paper.
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