Impact of JFET width on conduction characteristic for p-channel SiC IGBT

Abstract

In this article, the mechanism analysis of the impact of the LJFET on the conduction characteristic of SiC IGBT is verified through simulation results and actual tests. Planar p-channel SiC IGBTs with different LJFET including 3.2 μm, 10 μm, and 12 μm are fabricated and tested for trend verification, and test results are fit with simulation. Under the same conditions, when the LJFET increases from 3 μm to 10 μm, the conduction characteristic is relatively improved. Moreover, the forward voltage drop degenerates when the LJFET increases from 10 μm to 12 μm. When the gate voltage is −20 V, the forward voltage drop of the p-channel SiC IGBT at the current density of 100 A/cm2 is −10.20 V. At the same time, the breakdown voltage reaches 10 kV.