Abstract
The measurement of the entire ID-VG characteristic of a nanoscaled pMOSFET before and after the capture of a single elementary charge in a gate-oxide defect is demonstrated. The impact of a single trapped carrier on the device characteristics is compared with 3-D atomistic device simulations. The ID-VG behavior is identified to depend on the location of the oxide defect with respect to the critical spot of the current percolation path in the channel.
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