Abstract
Two dimensional numerical calculation of heat generation and transport in GaAs MESFETs with high frequency gate bias has been performed. In order to study the conjugate nature of electronic and thermal phenomena in the semiconductor devices, electron particles, momentum and energy equations, and the energy equations of optical and acoustic phonons as well as Poisson equation are solved simultaneously. Calculated results exhibited the effect of temperature distributions to the current charactreistics as high frequency gate voltage variation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
