Abstract
The impact of the fast and slow transient charge effect within defect sites of high-κ dielectrics for Al2O3 and bi-layer Al2O3/HfO2 In0.7Ga0.3As quantum-well (QW) MOSFETs was investigated in this report. In particular, the initial rapid degradation of the drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was due to the fast transient charging effect. The continued decrease of the drain current with pulse time was attributed to the slow transient charging effect, which is located near the interface oxide traps to respond to increased charging time. The degradation of drain current for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was much higher than that of the Al2O3 In0.7Ga0.3As QW MOSFET, which is associated with reliability instability of the HfO2 layer for In0.7Ga0.3As QW MOSFETs. The detailed reliability instability mechanism for bi-layer Al2O3/HfO2 In0.7Ga0.3As QW MOSFETs was analyzed based on the fast/slow transient charge effect and flicker (1/f) noise characteristics.
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