Abstract
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrodinger’s and Poisson’s equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7×1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Applied Physics A: Materials Science & Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
