Abstract
This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
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