Abstract
Anisotropic thermal stress near the melt/solid interface during growth of a Si crystal from a melt significantly affects control of grown-in defects when the diameter of the growing crystal is large. This effect on the behavior of intrinsic point defects in a growing Si crystal with 300-mm diameter was investigated by calculations and experiments. One has to take into account this effect in the development of a crystal-pulling process for 450-mm-diameter defect-free Si crystals.
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