Abstract
The effects of irradiation on graphene nano-disc (GND) non-volatile memory devices were investigated by 60Co γ-rays. The electrical characteristics of the devices were measured before and after γ-irradiation with doses ranging from 50 to 1000 krad (Si). The electrical properties of the devices in the pristine and erased states were nearly unchanged in response to ionizing doses up to 1 Mrad (Si). However, the electrical properties of the devices in the programmed states were significantly degraded with increasing dose levels. The degradation was mainly the result of photoemission, positive charge traps in the surrounding oxides, and holes injected into the GND trapping layer. This study improves the understanding of radiation effects on graphene-based nano-electronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
