Abstract
This paper mainly studies the electromagnetic immunity of two kinds of static random access memory (SRAM) chips using bulk silicon (SI) and insulator silicon (SOI) technologies respectively, and the effect of temperature on chip immunity. Direct power injection (DPI) method was used to test the immunity of each functional pin of the two chips, and the ground pin was selected to study the immunity under heat stress. The test results show that the immunity of each functional pin is different, the immunity of the same pin is also different under different working states, and the SOI technologies has better immunity than the SI technologies. At the same time, it was found that different temperatures would cause the chip’s immunity threshold to drift. This provides an important reference for the design of the chip immunity.
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