Abstract

In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.