Abstract
An ion layer gas reaction (ILGAR) technique for the deposition of thin metal oxide films such as zinc oxide has been developed. In a cyclic process a solid precursor layer was applied on a substrate by dipping in a Zn(ClO 4) 2 solution and subsequent drying. Reaction with gaseous NH 3/H 2O led to a hydroxide layer which is thermally dehydrated to ZnO. The steps were repeated until the desired layer thickness was obtained. Under optimized conditions the chlorine remainder lay below 0.3 at%. X-ray-diffraction revealed a preferred orientation concerning the (0 0 2) plane. The band gap was determined to E gap=3.38 eV. First ZnO/CIGSSe solar cells showed efficiencies of 10.7%.
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