Abstract
We report the use of black silicon (bSi) as a growth platform for III–V nanowires (NWs), which enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy. In addition, a new isolated growth regime is reported for self-catalyzed InAs NWs at record-low temperatures of 280 °C–365 °C, where consistently rectangular [-211]-oriented NWs are obtained. The bSi substrate is shown to support the growth of additionally GaAs and InP NWs, as well as heterostructured NWs. As seed particles, both ex-situ deposited Au nanoparticles and in-situ deposited In droplets are shown feasible. Particularly the InAs NWs with low band gap energy are used to extend low-reflectivity wavelength region into infrared, where the bSi alone remains transparent. Finally, a fabricated prototype device confirms the potential of III–V NWs combined with bSi for optoelectronic devices. Our results highlight the promise of III–V NWs on bSi for enhancing optoelectronic device performance on the low-cost Si substrates, and we believe that the new low-temperature NW growth regime advances the understanding and capabilities of NW growth.
Highlights
In the recent years, III–V nanowires (NWs) have been shown suitable for the fabrication of various optoelectronic devices, including solar cells1–4, light emitting diodes (LEDs)5–7, lasers8 and photodetectors9,10
The black silicon (bSi) substrate is suitable for the growth of various III–V NWs seeded by the most common particle types
BSi substrate is suitable for the growth of various III–V NWs seeded by the most common particle types and the NW growth occurs predominantly on the tips of the bSi pyramids
Summary
III–V nanowires (NWs) have been shown suitable for the fabrication of various optoelectronic devices, including solar cells, light emitting diodes (LEDs), lasers and photodetectors. One of the most notable growth substrates is silicon, which allows epitaxial growth of III–V NWs15 and has promise for high-performance device fabrication. The infrared (IR) reflectivity is high even with black silicon, an issue that has been previously addressed by e.g. pyrolytic carbon coating, Ag nanoparticles and oxide films21,22 These approaches provide high absorption in the IR wavelength region, their use in optoelectronics is limited since they are applicable only as passive components in devices. We explore for the first time the combination of black silicon and III–V nanowires, with expected benefits from the possibility for high quality crystal growth and photonic effects in nanowires. We hope that the growth of III–V NWs on bSi paves way for enhancing optoelectronic device performance on the low-cost Si substrates, and that the reported low-temperature NW growth regime broadens the capabilities and understanding of NW growth
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
